Updates and Guidance
For operational updates and health guidance from the University, please visit the COVID-19 Resource Guide.
To learn more about our spring term, please visit the Updates for Students page.
For operational updates and health guidance from the University, please visit the COVID-19 Resource Guide.
To learn more about our spring term, please visit the Updates for Students page.
Northwest Corner Building
Room 1007
Teherani’s research interests span semiconductor materials and devices with the goal of explaining semiconductor device physics through modeling, simulation, and experiment. His group conducts both theoretical and experimental work—from quantum-mechanical simulations to nanoscale fabrication. His previous work has studied strain engineering, high-mobility transistors (MOSFETs), tunneling transistors (TFETs), and metal-insulator-semiconductor interfaces in the strained-Si, strained-Ge, InAs, and GaSb material systems.
Teherani joined Columbia University as an assistant professor in the Department of Electrical Engineering in 2015. He received his BS in electrical and computer engineering from the University of Texas at Austin in 2008, and his SM and PhD degrees in electrical engineering and computer science from the Massachusetts Institute of Technology in 2010 and 2015. He was a co-recipient of the 2014 George E. Smith Award for best paper in IEEE Electron Device Letters for his work on record-high hole mobility in strained-Ge MOSFETs. He is currently serving on the Nanotechnology Committee of the IEEE Electron Devices Society.